1 dual igbtmod? nf-series module 400 amperes/600 volts CM400DY-12NF powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half- bridge confguration with each tran - sistor having a reverse-connected super-fast recovery free-wheel diode. all components and inter - connects are isolated from the heat sinking baseplate, offering simpli - fed system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control ups battery powered supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM400DY-12NF is a 600v (v ces ), 400 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 400 12 dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.18+0.04/-0.02 30.0+1.0/-0.5 d 3.660.01 93.00.25 e 1.890.01 48.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 k 0.55 14.0 l 0.26 dia. dia. 6.5 m m6 metric m6 dimensions inches millimeters n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.87 22.2 s 0.33 8.5 t 0.02 0.5 u 0.110 2.8 v 0.16 4.0 w 0.85 21.5 x 0.94 24.0 a x w f f b n l (4 places) d m nuts (3 places) g g h k k k p p p t thick u width q q v c s r g2 e2 e1 g1 c1 e2 c2e1 t c measured point (baseplate) label c2e1 e2 c1 g2 e2 e1 g1 e
2 CM400DY-12NF dual igbtmod? nf-series module 400 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 3 CM400DY-12NF dual igbtmod? nf-series module 400 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, t c unless otherwise specied ratings symbol cmdy-nf units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current*** (dc, t c ' = 92c) i c 400 amperes peak collector current i cm 800* amperes emitter current** (t c = 25c) i e 400 amperes peak emitter current** i em 800* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 1130 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb weight 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts . static electrical characteristics, t c unless otherwise specied characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 40ma, v ce = 10v 5.0 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 400a, v ge = 15v, t j = 25c 1.7 2.2 volts i c = 400a, v ge = 15v, t j = 125c 1.7 volts total gate charge q g v cc = 300v, i c = 400a, v ge = 15v 1600 nc emitter-collector voltage** v ec i e = 400a, v ge = 0v 2.6 volts dynamic electrical characteristics, t c unless otherwise specied characteristics symbol test conditions min. typ. max. units input capacitance c ies 60 nf output capacitance c oes v ce = 10v, v ge = 0v 7.3 nf reverse transfer capacitance c res 2.4 nf inductive turn-on delay time t d(on) 300 ns load rise time t r v cc = 300v, i c = 400a, 200 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 3.1 , 450 ns time fall time t f inductive load 300 ns diode reverse recovery time** t rr switching operation, 250 ns diode reverse recovery charge** q rr i e = 400a 6.8 c *pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi) ***tc' measured point is just under the chips. if this vaule is used, rth(f-a) should be measured just under the chips .
2 CM400DY-12NF dual igbtmod? nf-series module 400 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 3 CM400DY-12NF dual igbtmod? nf-series module 400 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference 0.11 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference 0.19 c/w point per outline drawing thermal resistance, junction to case r th(j-c) 'q per igbt 1/2 module, 0.066 c/w t c reference point under chips contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied 0.04 c/w external gate resistance r g 1.6 16 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 0 1 3 4 2 5 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes ) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 4 3 0 200 600 2 1 0 800 v ge = 15v t j = 25 c t j = 125 c v ge = 0v c ies c oes c res i c = 800a i c = 400a i c = 160a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 1 0 200 0 v ge = 20v 10 11 12 15 13 9 8 t j = 25 o c 400 600 800 400 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 3.1 ? t j = 125 c inductive load t f 10 3 t j = 25 c t j = 125 c
4 CM400DY-12NF dual igbtmod? nf-series module 400 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25 c per unit base = r th( j-c) = 0.11 c/w (igbt) r th( j-c) = 0.19 c/w (fwdi) normalized transient thermal impedance, z th( j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 500 1000 1500 2500 2000 v cc = 300v emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) v cc = 300v v ge = 15v r g = 3.1 w t j = 25 c inductive load v cc = 200v i c = 400a 10 3 collector current, i c , (amperes) switching loss, e sw( on) , e sw( off) , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 300v v ge = 15v r g = 3.1 w t j = 125 c inductive load c snubber at bus v cc = 300v v ge = 15v i c = 400a t j = 125 c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) gate resistance, r g , ( w ) switching loss, e sw( on) , e sw( off) , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 10 2 switching loss vs. gate resistance (typical) e sw(on) e sw(off) e sw(on) e sw(off) i rr t rr
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